Critical challenges for non-critical layersGOMEZ, J. M; POPOVA, I. Y; ZHANG, B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79722T.1-79722T.9, 2Conference Paper

Development of New Si-contained hardmask for Tri-layer processNAKAJIMA, Makoto; KANNO, Yuta; SHIBAYAMA, Wataru et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 797225.1-797225.8, 2Conference Paper

Etch durable Spin-on hard maskMURAMATSU, Makoto; IWASHITA, Mitsuaki; KONDO, Takashi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 797226.1-797226.6, 2Conference Paper

Dependence of the fused-silica etch rate on the etch mask opening diameterKIMMLE, Christina; WOLFF, Sandra; DOERING, Christoph et al.Microelectronic engineering. 2013, Vol 112, pp 10-13, issn 0167-9317, 4 p.Article

Innovatively composite hard mask to feature sub-30 nm gate patterningLINGKUAN MENG; CHUNLONG LI; XIAOBIN HE et al.Microelectronic engineering. 2014, Vol 127, pp 7-13, issn 0167-9317, 7 p.Article

Study of Ion Implantation into EUV Resist for LWR ImprovementKIKUCHI, Yukiko; KAWAMURA, Daisuke; MIZUNO, Hiroyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7969, issn 0277-786X, isbn 978-0-8194-8528-1, 79692H.1-79692H.9, 2Conference Paper

Freeform illumination sources: An experimental study of source-mask optimization for 22 nm SRAM cellsBEKAERT, J; LAENENS, B; TSAI, M. C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7640, issn 0277-786X, isbn 978-0-8194-8054-5 0-8194-8054-1, 764008.1-764008.12, 2Conference Paper

Double and Triple Exposure With Image Reversal in a Single Photoresist LayerNDOYE, Coumba; ORLOWSKI, Marius.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7970, issn 0277-786X, isbn 978-0-8194-8529-8, 79701H.1-79701H.10Conference Paper

E-beam Patterning and Stability Study of Sub-22 nm HSQ PillarsCHEN, Wei-Su; TSAI, Ming-Jinn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79722V.1-79722V.9, 2Conference Paper

The Resist-core Spacer Patterning Process for Fabrication of 2xnm Node Semiconductor DevicesSHO, Koutarou; OORI, Tomoya; IIDA, Kazunori et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79720C.1-79720C.11, 2Conference Paper

Photonic crystal nanocavities in GaAs/AlGaAs with oxidised bottom claddingWELNA, Karl; HUGUES, Maxime; REARDON, Christopher P et al.Photonics and nanostructures (Print). 2013, Vol 11, Num 2, pp 139-144, issn 1569-4410, 6 p.Article

Ultra-thin Film EUV Resists beyond 20nm LithographyNAKAGAWA, Hiroki; FUJISAWA, Tomohisa; GOTO, Kentaro et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79721I.1-79721I.7, 2Conference Paper

30nm full field quartz template replicated from Si master for FLASH active layer NILLEE, Duhyun; LEE, Byung-Kyu; YEO, Jeongho et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8166, issn 0277-786X, isbn 978-0-8194-8791-9, 81661U.1-81661U.7, 2Conference Paper

Silicon nanostructuring for 3D bulk silicon versatile devicesBOPP, M; CORONEL, P; BUSTOS, J et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 885-888, issn 0167-9317, 4 p.Conference Paper

Carbon etching with a high density plasma etcherPEARS, Kevin A; STOLZE, Jens.Microelectronic engineering. 2005, Vol 81, Num 1, pp 7-14, issn 0167-9317, 8 p.Article

Wafer-Edge Defect Reduction for Tri-layer Materials in BEOL ApplicationsDU, J. R; HUANG, C. H; YANG, Elvis et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7971, issn 0277-786X, isbn 978-0-8194-8530-4, 79712L.1-79712L.10, 2Conference Paper

Wafer Bevel Protection During Deep Reactive Ion EtchingCHARAVEL, Rémy; ROIG, Jaume; ALTAMIRANO-SANCHEZ, Efraín et al.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 2, pp 358-365, issn 0894-6507, 8 p.Article

Development of spin-on hard mask materials under resist in nano imprint lithographyTAKEI, Satoshi; OGAWA, Tsuyoshi; DESCHNER, Ryan et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7639, issn 0277-786X, isbn 978-0-8194-8053-8 0-8194-8053-3, 76391C.1-76391C.8, 2Conference Paper

Image Reversal Trilayer Materials and ProcessingABDALLAH, David J; KUROSAWA, Kazunori; WOLFER, Elizabeth et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7520, issn 0277-786X, isbn 978-0-8194-7909-9 0-8194-7909-8, 75200L.1-75200L.12Conference Paper

A new etching chemistry for carbon hard mask structuresPEARS, Kevin A.Microelectronic engineering. 2005, Vol 77, Num 3-4, pp 255-262, issn 0167-9317, 8 p.Article

56 nm pitch Cu dual-damascene interconnects with self-aligned via using negative-tone development Lithography-Etch-Lithography-Etch patterning schemeLOQUET, Yannick; MIGNOT, Yann; MORRIS, Bryan et al.Microelectronic engineering. 2013, Vol 107, pp 138-144, issn 0167-9317, 7 p.Conference Paper

Negative hybrid sol-gel resist as hard etching mask for pattern transfer with dry etchingGRENCI, Gianluca; GIUSTINA, Gioia Della; POZZATO, Alessandro et al.Microelectronic engineering. 2012, Vol 98, pp 134-137, issn 0167-9317, 4 p.Conference Paper

A direct-write, resistless hard mask for rapid nanoscale patterning of diamondMCKENZIE, Warren; PETHICA, John; CROSS, Graham et al.Diamond and related materials. 2011, Vol 20, Num 5-6, pp 707-710, issn 0925-9635, 4 p.Article

Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm node on a 6T-SRAM cellALTAMIRANO-SANCHEZ, E; PARASCHIV, V; DEMAND, M et al.Microelectronic engineering. 2011, Vol 88, Num 9, pp 2871-2878, issn 0167-9317, 8 p.Article

13nm gate Intentional Defect Array (IDA) wafer patterning by e-beam lithography for defect metrology evaluationRAGHUNATHAN, Ananthan; BENNETT, Steve; STAMPER, Harlem O et al.Microelectronic engineering. 2011, Vol 88, Num 8, pp 2729-2731, issn 0167-9317, 3 p.Conference Paper